Examination of Barium Stannate (BaSnO3) for Power Electronics
Project Description
Electronics is the heart of modern technology. Power electronics is a branch of solid-state electronics to control and convert electric power. Unlike low power electronics (e.g. chips of computers), power electronics deal with high current, voltage and power. To withstand with high electric power, we need special types of electronic materials. One of the important aspect materials research is to explore new materials for existing or future applications.
Barium Stannate (BaSnO3) is a new wide bandgap semiconductor material with excellent electronic properties that has a huge potential for power electronics. In this project we will explore few structural properties of epitaxial BaSnO3 in order to determine its strengths and weaknesses as a semiconductor material. To do this, we will observe the growth of this material using the Molecular Beam Epitaxy (MBE) tool. We will examine its surface using Atomic Force Microscopy (AFM) and its structure using x-ray diffraction (XRD).
