Examination of Complex Oxides for Solid State Electronics

Year: 
2016

Project Description

Deposited oxide thin films are used in many advanced electronic applications such as logic and memory devices, III–V power and high frequency devices, optoelectronics, tunnel junctions, and spintronic. Oxides are thermodynamically stable but there are obstacles like poor mechanical properties and conductivity. The Holy Grail is the capability to tune electronic properties of oxides to reach an all oxide solid state device. This would be specially interesting for power device applications as power devices are expected withstand high current, voltage and power. Complex oxides show tremendous tunability and very interesting physics.


In this project interesting electronic properties of heteroepitaxial complex oxides will be studied to determine its strengths and limitations for solid state applications. To do this, we will observe the growth of this material using the Molecular Beam Epitaxy (MBE) tool. We will examine its properties using Ellipsometry and Hall measurements.

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